PART |
Description |
Maker |
ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
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Microsemi, Corp. Microsemi Corporation
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FM600TU-2A |
6-PACK High Power MOSFET Module 300 Amperes/100 Volts
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Powerex Power Semiconductors
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FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
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Microsemi, Corp. STMicroelectronics N.V. MICROSEMI CORP
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APT30M70SVRG APT30M70BVRG |
Power MOSFET; Package: D3 [S]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET; Package: TO-247 [B]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
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Microsemi, Corp.
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SER30KB60S SER30KE60 SER30KE60S SER30KE60TX SER30K |
30AMP 300-600 VOLT ULTRAFAST POWER SURFACE MOUNT RECTIFIER
|
Solid States Devices, Inc
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MUR6030PT |
60.0 Ampere,300 Volt Common Cathode Fast Recovery Epitaxial Diode
|
Thinki Semiconductor Co., L...
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PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
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NXP Semiconductors
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CDLL4620 CDLL4614 CDLL4615 CDLL4616 CDLL4617 CDLL4 |
4.3 volt zener diode 3.3 volt zener diode 5.1 volt zener diode 3.9 volt zener diode 2.4 volt zener diode LEADLESS PACKAGE FOR SURFACE MOUNT 2-of-3 Decoder/Demultiplexer 8-US8 -40 to 85 2-of-3 Decoder/Demultiplexer 8-SM8 -40 to 85 2-of-3 Decoder/Demultiplexer 8-DSBGA -40 to 85 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) 4.7 volt zener diode 5.6 volt zener diode 2.2 volt zener diode 3.6 volt zener diode 2.0 volt zener diode
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Compensated Devices Incorporated CDI-DIODE[Compensated Deuices Incorporated]
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RJU003N03T106 |
2.5V Drive Nch MOSFET 300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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Rohm
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IXFK44N50F IXFX44N50F |
HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die 44 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET FILM/M CAPACITANCE=4.7 VOLT=100 HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die
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IXYS, Corp. ETC[ETC] IXYS[IXYS Corporation]
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